Intel, Micron sample 50nm multilevel cell NAND flash

Intel Corp. and Micron Technology Inc. are now sampling 50nm multilevel cell (MLC) NAND flash memory manufactured by their joint venture, IM Flash Technologies.

The MLC NAND flash memory components feature a die and cell size suited for use in today’s computing and consumer electronics devices. The 50nm MLC technology, sampling at a 16Gbit die density, complements the previously announced 50nm single-level cell (SLC) products that the companies are shipping today at a 4Gbit die density.

The MLC NAND product caps a year of productive activity in which Intel and Micron have ramped a 300mm flash manufacturing factory network. Both companies are currently developing sub-40nm NAND flash memory products.

"In only one year, Micron and Intel have developed the industry’s leading NAND flash memory MLC product and aggressively ramped a factory network that is delivering today for our customers," said Micron chief operating officer Mark Durcan.

"The progress of our joint venture with Micron to develop industry-leading architecture has surpassed our expectations during this first year," said Randy Wilhelm, Intel VP and general manager, NAND products group. "Intel and Micron were the first in the industry to introduce 50nm SLC NAND samples last July, and developing the industry’s most advanced 50nm MLC architecture is a further proof point to the strength of this development and manufacturing relationship."

Along with producing NAND flash out of Micron facilities in Idaho and Viginia in the U.S., the IM Flash joint venture has also been manufacturing wafers since February at a 300mm facility in Utah, U.S. The companies are also moving forward on plans to put up an IM Flash manufacturing facility in Singapore.

In November 2006, Micron and Intel said that they intend to form a JV in Singapore to build and manage a NAND flash wafer fab that will come online in the second half of 2008.